High power semiconductor device

Details High power semiconductor device High power semiconductor device

1974-10-21

1976-06-01

James, Andrew J.

357 88, 357 89, H01L 2972

Patent

active

039613534

ABSTRACT:
A high power semiconductor device is formed by providing a semiconductor substrate of N.sup.- conductivity, rendering the backside of same porous as by subjecting same to anodic treatment carried out in a concentrated solution of hydrofluoric acid, converting the porous region to an N.sup.+ region, as by arsenic diffusion and forming an active device by conventional techniques in the top surface of the substrate. The method permits usage of high quality N.sup.- substrates and at the same time eliminates the requirement of growing thick epitaxial layers.

REFERENCES:
patent: 3617822 (1971-11-01), Kobayashi
patent: 3640806 (1972-02-01), Watanabe
patent: 3649383 (1972-03-01), Akasaki
patent: 3694276 (1972-09-01), Wakamiya et al.
patent: 3703420 (1972-11-01), Vora
patent: 3775196 (1973-11-01), Wakamiya et al.

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