Method of semiconductor device for generating electron beams

Details Method of semiconductor device for generating electron beams Method of semiconductor device for generating electron beams

1981-05-29

1983-02-01

Ozaki, G.

Metal working

Plural diverse manufacturing apparatus including means for...

Common reciprocating support for spaced tools

29576R, 29580, 29591, 148187, 313303, 313366, H01L 21223, H01L 2126

Patent

active

043707971

ABSTRACT:
The invention relates to a semiconductor cathode and a camera tube and a display tube, respectively, having such a cathode, based on avalanche breakdown in a p-n junction extending parallel to the surface of the semiconductor body. The released electrons obtain extra energy by means of an accelerating electrode provided on the device. The resulting efficiency increase makes the manufacture of such cathodes in planar silicon technology practical. Since the depletion zone of the p-n junction upon avalanche breakdown does not extend to the surface, the released electrons show a sharp, narrow energy distribution. This makes such cathodes particularly suitable for camera tubes. In addition they find application, for example, in display tubes and flat displays.

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"Hot Electron Emission From Shallow p-n Junctions in Silicon", Bartelink et al., Physical Review, vol. 130, No. 3, pp. 972-985, May 1, 1963.

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