Method for thermo-compression diffusion bonding each side of a s

Details Method for thermo-compression diffusion bonding each side of a s Method for thermo-compression diffusion bonding each side of a s

1979-03-09

1981-03-24

Ramsey, Kenneth J.

Metal working

Method of mechanical manufacture

Assembling or joining

29588, 29591, 228160, 228188, 228194, 228263A, B23K 2014, H01L 2158

Patent

active

042571561

ABSTRACT:
A method is provided for thermo-compression diffusion bonding first and second structured copper strain buffers, respectively, directly to the two opposed surfaces of a substrateless semiconductor device wafer. The expensive tungsten or molybdenum support plate conventionally used to provide structural integrity to the relatively fragile semiconductor device wafer is thus eliminated. The method includes sandwiching the semiconductor device wafer between copper strand type strain buffers each having a lateral extent greater than the lateral extent of the wafer, diffusion bonding the strain buffers to the semiconductor device via first and second metallic coating layers, and removing most of the overhanging portions of the buffer which are not bonded to the wafer. A step of etching and passivating the edges of the wafer is also disclosed.

REFERENCES:
patent: 3237272 (1966-03-01), Kallander
patent: 3295089 (1966-12-01), Moore
patent: 3657611 (1972-04-01), Yoneda
patent: 3761783 (1973-09-01), Kroger et al.
patent: 4005454 (1977-01-01), Froloff et al.
patent: 4067104 (1978-01-01), Tracy
patent: 4204628 (1980-05-01), Houston et al.
Glascock et al., Published International Application WO 79/01012, Nov. 29, 1979 (priority date 11/6/1978). _

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