Semiconductor laser

Details Semiconductor laser Semiconductor laser

1995-09-05

1997-04-08

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 318

Patent

active

056195206

ABSTRACT:
A semiconductor laser of this invention includes: a semiconductor substrate; a first cladding layer made of first conductivity type ZnMgSSe, which is held by the semiconductor substrate and lattice-matches with the semiconductor substrate; a stripe-shaped second cladding layer made of second conductivity type ZnMgSSe lattice-matching with the semiconductor substrate; a light-emitting layer including a first and a second light guiding layers made of Zn.sub.1-x Mg.sub.x S.sub.1-y Se.sub.y (0.ltoreq.x<1, 0.ltoreq.y<1) and a quantum well layer made of Zn.sub.1-z Cd.sub.z Se (0.ltoreq.z<1) which is interposed between the first and the second light guiding layers, the light-emitting layer being interposed between the first and the second cladding layers; and a burying layer which is made of ZnMgSSe lattice-matching with the semiconductor substrate and formed on sides of the second cladding layer.

REFERENCES:
patent: 5404027 (1995-04-01), Haase et al.
patent: 5475237 (1995-12-01), Narui et al.
patent: 5519722 (1996-05-01), Iwata
Nakayama et al, "Continuous-Wave Operation of ZnMgSSe Based Blue-Green Laser Diodes Under High Temperature and High Output Power", Electronics Letters, 31 Mar. 1994, vol. 30, No. 7, pp. 568-569.
Salokatve et al, "Continuous-Wave, Room Temperature, Ridge Waveguide Green-Blue Diode Laser," Electronics Letters, 9 Dec. 1993, vol. 29, No. 25, pp. 2192-2193.
Haase et al, "Low-Threshold Buried-Ridge II-VI Laser Diodes", Appl. Physics, Lett. 63 (17), 25 Oct. 1993, pp. 2315-2317.

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