Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1995-01-13

1997-04-08

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

056195192

ABSTRACT:
A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5.degree. or more from a {100} plane in a <011> direction.

REFERENCES:
patent: 5146466 (1992-09-01), Hamada et al.
Very Low Threshold Current Density of a Ga1nP/A1Ga1nP Double-Heterostructur Laser Grown by MOCVD, published Aug. 23, 1987, Electronic Letters, Vole 23, pp. 894-895.
Electronics Letters, Aug. 18, 1988, vol. 24, No. 17, pp. 1094-1095.
Electronics Letters, Mar. 16, 1989, vol. 25, No. 6, pp. 413-414.
Electronics Letters, Mar. 17, 1988, vol. 24, No. 6, pp. 326-327.
Journal of Crystal Growth 77 (1986), pp. 354-359.
Journal of Crystal Growth 93 (1988), pp. 406-411.
Journal of Crystal Growth 68 (1984) pp. 483-489.
Journal of Crystal Growh 17 (1972), pp. 189-206.

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