Programming method for healing over-erased cells for a flash mem

Static information storage and retrieval – Floating gate – Particular biasing

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36518509, 36518522, 365200, 365201, G11C 2900

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active

056194544

ABSTRACT:
A method for healing a plurality over-erased memory cells along a digit line comprises a accessing a number of control gates and accessing a digit line thereby activating the number of memory cells, each of the memory cells having a source, a drain, and a control gate. Subsequent to accessing the digit line, the presence of at least one over-erased activated cell the number of memory cells is sensed. Subsequent to sensing the presence of over-erased cells, a voltage of between about 4.0 volts and about 6.0 volts is applied to the digit line, a voltage between about 4.0 volts and about 6.0 volts is applied to the control gates of at least the over-erased cells, and a voltage of between about 0.0 volts and about 1.0 volts is applied to the source of the accessed cells. All over-erased cells along the digit line are thereby healed simultaneously.

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