Semiconductor device and process for producing the same

Details Semiconductor device and process for producing the same Semiconductor device and process for producing the same

1982-04-23

1987-05-05

James, Andrew J.

357 16, 357 52, H01L 2980, H01L 2976, H01L 29205, H01L 29201

Patent

active

046636439

ABSTRACT:
The present invention is an improvement in a normally off-type high electron mobility transistor (HEMT) having a first single crystalline semiconductor layer, such as an undoped GaAs layer, and a second single crystalline semiconductor layer, such as an N-doped AlGaAs layer, having an electron affinity different from that of the first single crystalline semiconductor layer. A heterojunction is formed between the first and second single crystalline semiconductor layers. An electron-storing layer is formed adjacent to the heterojunctions serving as a conduction channel having a quasi two-dimensional electron gas. The concentration of electron gas is controlled by a gate electrode. An additional semiconductor layer, such as an N-doped GaAs layer, is formed at a portion of the second single crystalline layer in the area adjacent to the gate electrode. The additional semiconductor layer can generate the quasi two-dimensional electron gas even when no such gas is generated under the crystal parameter of the first and second single crystalline semiconductor layers. This generation of the quasi two-dimensional electron gas ensures that the HEMT has good reproducibility in respect to normally off-type operation.

REFERENCES:
patent: 3993506 (1976-11-01), Moon
patent: 4075652 (1978-02-01), Umebachi et al.
patent: 4141021 (1979-02-01), Decker
patent: 4163237 (1979-07-01), Dingle et al.
patent: 4173764 (1979-11-01), de Cremoux
patent: 4231050 (1980-10-01), Casey et al.
patent: 4424525 (1984-01-01), Mimura
patent: 4426656 (1984-01-01), Dilorenzo
Alferov et al., "AlAs-GaAs Heterojunction . . . ", Mar. 70, Soviet Physics-Semiconductors, vol. 3, No. 3, pp. 1107-1110.
Mimura et al., Jap. Jour. of App. Phys, vol. 19, No. 5, May 1980, pp. L225-L227, "A New . . . Heterojunctions".
Delage Beaudeuf et al., "Two . . . Structure", Elec. Lettr. 14 Aug. 1980, vol. 16, No. 17, pp. 667-668.
8179 IEEE Electron Device Letters, "Modulation-Doped MBE GaAs
-Al.sub.x Ga.sub.1-x As MESFETs", Wira et al., vol. EDL-2, No. 1, Jan. 1981, pp. 14-15.
8093 IEEE Trans on Electron Devices, "A Study of High-Speed Normally Off and Normally On Al.sub.0.5 Ga.sub.0.5 As Heterojunction Gate GaAs FET's (HJFET)", Morkoc et al., vol. ED-25, No. 6, Jun. 6, 1978, pp. 619-626.

Affiliated with

Also associated with

Rating

Semiconductor device and process for producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and process for producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and process for producing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2401310