Composite circuit for power semiconductor switching

Details Composite circuit for power semiconductor switching Composite circuit for power semiconductor switching

1981-04-24

1987-05-05

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307252R, 307304, 307305, 307571, H03K 1772, H03K 1756

Patent

active

046635475

ABSTRACT:
A solid state composite control circuit includes a normally-off gating device connected in series with a normally-on high voltage semiconductor device so that the combination operates as a normally-off high power semiconductor device. The control device is a low voltage semiconductor device, which can switch rapidly with very low gate turn-off current during turn-off of the composite circuit. In a particular example, a low voltage, normally-off, MOSFET is connected in series with the cathode of a high voltage, normally-on FCT. In another example, a low voltage, normally-off, MOSFET is connected in series with the source of a high voltage, normally-on JFET. The composite circuit has a very high turn-off gain as well as high dv/dt and di/dt capability.

REFERENCES:
patent: 3268776 (1966-08-01), Reed
patent: 3614474 (1971-10-01), Hahn
patent: 3916222 (1975-10-01), Compton
patent: 4107725 (1978-08-01), Yoshida et al.
patent: 4354121 (1982-10-01), Terasawa et al.
S. C. Sun et al., "Modeling of the On-Resistance of LDMOS, VDMOS and VMOS Power Transistors", IEEE Transactions on Electron Devices, vol. ED-27, No. 2, Feb., 1980, pp. 356-367.
J. Homola & A. G. Milnes, "Turn-Off-Type Field-Controlled Thyristor Concepts for High Power Operation", Solid-State Electronics, vol. 23, (1980), pp. 1101-1105.
B. Jayant Baliga, "The Asymmetrical Field-Controlled Thyristor", IEEE Transactions on Electron Devices, vol. ED-27, No. 7, Jul. 1980, pp. 1262-1268.
B. Jayant Baliga, "A Power Junction Gate Field-Effect Transistor Structure with High Blocking Gain", IEEE Transactions on Electron Devices, vol. ED-27, No. 2, (Feb. 1980), pp. 368-373.

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