Power hemt structure

Details Power hemt structure Power hemt structure

1987-08-07

1988-09-27

James, Andrew J.

Fishing, trapping, and vermin destroying

357 15, 357 55, 437203, H01L 2980, H01L 2956

Patent

active

047745550

ABSTRACT:
A modulation-doped field effect transistor comprises a gate recess through a top insulating layer, having a cross-section in a semiconductor layer increasing down to an interface with a further semiconductor layer and thereafter having a cross-section in the further semiconductor layer decreasing down to the bottom of the recess in the further semiconductor layer. A gate electrode is formed in the recess.

REFERENCES:
patent: 3813585 (1974-05-01), Tarui et al.
patent: 4503600 (1985-03-01), Nii et al.
patent: 4517730 (1985-05-01), Meignant
Technical Digest, International Electron Devices Meeting 1986, Los Angeles, CA; Dec. 7-10, 1986; pp. 456-IEDM86-IEDM86-459.

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