Method for forming self-aligned emitters and bases and source/dr

Details Method for forming self-aligned emitters and bases and source/dr Method for forming self-aligned emitters and bases and source/dr

1987-06-02

1988-09-27

Roy, Upendra

Fishing, trapping, and vermin destroying

148DIG140, 148DIG147, 357 42, 357 91, 437 29, 437 34, 437192, 437193, 437200, H01L 2174, H01L 21265

Patent

active

047742046

ABSTRACT:
A method for forming a BICMOS device having MOS devices and bipolar devices formed during the same process includes the step of first forming bipolar MOS regions and then forming gate electrodes in the MOS regions and poly emitters in the bipolar regions. The gate electrodes and bipolar regions have a layer of refractory metal formed on the upper surface thereof and covered by a protective cap. The extrinsic bases formed on either side of the emitter electrode and the source/drain regions are formed on either side of the gate electrode by forming a layer of silicide and implanting the layer of silicide with p-type impurities which are subsequently driven downward into the substrate. The protective cap prevents the p-type impurities from being introduced into the poly emitter.

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Li et al, IEEE-Electron Device Lett's, EDL-8, (1987), 338.

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