Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-05-19
1998-12-01
Tran, Minh-Loah
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257393, 257752, 257903, 257641, H01L 2976
Patent
active
058442545
ABSTRACT:
The disclosure includes preferred semiconductor transistor devices utilizing thin film transistors, as well as preferred methods of forming such devices. Specifically, a bottom thin film transistor gate is formed having a top surface. An insulating filler is provided adjacent the thin film transistor gate to an elevation at least as high as the thin film transistor gate top surface, and subsequently levelled to provide generally planar insulating surfaces adjacent the thin film transistor gate. The planar insulating surfaces are substantially coplanar with the thin film transistor gate top surface. A planar semiconductor thin film is then formed over the thin film transistor gate and over the adjacent planar insulating surfaces. The thin film is doped to form source and drain regions of a thin film transistor which is bottom gated by the thin film transistor gate.
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Dennison Charles
Manning Monte
Micro)n Technology, Inc.
Tran Minh-Loah
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