Method of exposure using an electron beam to provide uniform dos

Details Method of exposure using an electron beam to provide uniform dos Method of exposure using an electron beam to provide uniform dos

1990-12-12

1993-01-05

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504921, 2504923, 250398, H01J 308, H01L 21027

Patent

active

051773678

ABSTRACT:
There are disclosed an electron exposure method and an apparatus therefor used in a process for preparing a semiconductor manufactuirng mask. In accordance with this invention, in irradiating an electron beam onto a mask blank, an irradiation is conducted in a manner to relatively decrease a beam current so that a dose quantity of the electron beam to be irradiated becomes uniform on the surface of the mask blank as the irradiation position shifts from the central portion to the peripheral portion apt to be subjected to fogging exposure of the surface of the mask blank.

REFERENCES:
patent: 4449051 (1984-05-01), Berkowitz
patent: 4463265 (1984-07-01), Owen et al.
Japanese Patent Abstract 63-58829, Dated Mar. 14, 1988.
Journal of Vacuum Science and Technology, Oct.-Dec. 1983, "Proximity Effect Correction on Substractes etc."

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