Pseudo uniphase charge coupled device

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Details

357 30, H01L 2978, H01L 2714, H01L 3100

Patent

active

049928414

ABSTRACT:
A pseudo uniphase CCD array having four functional regions, a clocked barrier region, a clocked well region, a virtual barrier region, and a gate variable potential well region per stage. The described structure allows flexibility in setting operating voltages and avoids the breakdown and fabrication difficulties of a virtual well region. The device employs a virtual barrier plus adjacent MOS well fixed potential region and uses clocking of barrier and well regions to achieve charge transfer. A fabrication sequence and operating potential selection criteria are also included.

REFERENCES:
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patent: 4032952 (1977-06-01), Ohba et al.
patent: 4207477 (1980-06-01), Esser
patent: 4649407 (1987-03-01), Kitamura et al.
patent: 4725872 (1988-02-01), Blouke et al.
patent: 4779124 (1988-10-01), Hynecek
patent: 4814844 (1989-03-01), Bluzer
Hobson Charge-Transfer Devices, Edward Arnold, London 1978, pp. 20-27.

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