Method for fabricating a semiconductor device including a step f

Details Method for fabricating a semiconductor device including a step f Method for fabricating a semiconductor device including a step f

1991-08-28

1993-01-05

Powell, William A.

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 19, 156657, 156662, C03C 2300, C03C 1500, B08B 100, B44C 122

Patent

active

051767562

ABSTRACT:
A method for fabricating a semiconductor device comprises the steps of cleaning a semiconductor substrate in a cleaning liquid essentially consisted of a mixture of an ammonia water having a composition of 29 percent by weight, a hydrogen peroxide aqueous solution having a composition of 31 percent by weight and a deionized water. The cleaning liquid contains the ammonia water and the hydrogen peroxide aqueous solution with respective volume parts such that the volume part of the ammonia is set equal to or smaller than 30 parts with respect to the deionized water of 1000 parts, the volume part of the ammonia water is set equal to or smaller than the volume part of the hydrogen peroxide aqueous solution, and the volume part of the hydrogen peroxide aqueous solution is set equal to or smaller than 100 parts with respect to the deionized water of 1000 parts. The volume part of the hydrogen peroxide aqueous solution is further set equal to or smaller than a boundary composition Y2 represented as

REFERENCES:
"A Mechanistic Study of Silicon Etching in NH.sub.3 /H.sub.2 O.sub.2 Cleaning Solutions", van den Meerakker et al, Journal of the Electrochemical Society, vol. 137, No. 4, Apr., 1990, pp. 1239-1243.
"Etching Process of Si Wafers During NH.sub.4 OH Cleaning" Tanaka et al, Extended Abstracts, vol. 90-1, May 6-10, 1990, pp. 689-690.
"Oxidation Process of Si Wafer During NH.sub.4 OH Cleaning", Sakurai et al, Extended Abstracts, vol. 90-1, May 6-11, 1990, pp. 710-711.
"Purifying Si and SiO.sub.2 Surfaces with Hydrogen Peroxide", Kern, Semiconductor International, vol. 7, No. 4, Apr., 1984, pp. 94-99.
"Cleaning Solutions Based on Hydrogen Peroxide for use in Silicon Semiconductor Technology", Kern et al, RCA Review, vol. 31, No. 2, Jun. 1970, pp. 187-206.

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