Semiconductor controlled rectifier having an auxiliary region wi

Details Semiconductor controlled rectifier having an auxiliary region wi Semiconductor controlled rectifier having an auxiliary region wi

1976-01-27

1978-09-12

Clawson, Jr., Joseph E.

357 20, 357 51, 357 68, 357 86, H01L 2974

Patent

active

041141784

ABSTRACT:
A semiconductor controlled rectifier comprising a semiconductor substrate consisting of four layers doped alternately with p- and n-type impurities, a pair of main electrodes kept in ohmic contact with the outermost p- and n-type layers, an N auxiliary region in the intermediate p-type layer with an auxiliary contact thereto, and a gate electrode in contact with the intermediate p-type layer, wherein a portion of the gate electrode is disposed adjacent to the auxiliary region, where there are localized regions forming low resistance paths between the gate electrode and the auxiliary electrode.

REFERENCES:
patent: 3476989 (1969-11-01), Miles et al.
patent: 3566211 (1971-02-01), Svedberg
patent: 3590346 (1971-06-01), Bilo et al.
patent: 3638042 (1972-01-01), Studtmann
patent: 3914783 (1975-10-01), Terasawa
patent: 3968512 (1976-07-01), Voss
patent: 4016591 (1977-04-01), Terasawa
J. Garrett, "The Evolution of a High-Power Fast-Switching Thyristor," Electrical Engineering, vol. 48 #5, May 1971, pp. 33-35.

Affiliated with

Also associated with

Rating

Semiconductor controlled rectifier having an auxiliary region wi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor controlled rectifier having an auxiliary region wi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor controlled rectifier having an auxiliary region wi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2387374