Non-volatile memory and method for operating the same

Details Non-volatile memory and method for operating the same Non-volatile memory and method for operating the same

1997-12-24

1999-12-28

Phan, Trong

Static information storage and retrieval

Floating gate

36518508, 36518528, G11C 1604

Patent

active

060090111

ABSTRACT:
A non-volatile memory includes: at least one memory cell including one non-volatile memory transistor and one capacitor; the non-volatile memory transistor being composed of a first dielectric film, a floating gate, a second dielectric film and a control gate sequentially laminated on a semiconductor substrate, and source/drain diffusion layers formed in the semiconductor substrate; the capacitor being composed of a capacitor dielectric film sandwiched between two electrodes, one of the electrodes being connected to the source diffusion layer of the non-volatile memory transistor; and an injecting/drawing means for injecting/drawing electrons from the drain diffusion layer to the floating gate by use of a tunnel current.

REFERENCES:
patent: 5627392 (1997-05-01), Diorio et al.
patent: 5640345 (1997-06-01), Okuda et al.
patent: 5814850 (1998-09-01), Iwasa

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