Method of fabricating a BiCMOS structure

Details Method of fabricating a BiCMOS structure Method of fabricating a BiCMOS structure

1993-01-27

1994-12-20

Hearn, Brian

Fishing, trapping, and vermin destroying

437 32, 437 59, 437 28, 148DIG9, H01L 21265

Patent

active

053745663

ABSTRACT:
A method of fabricating a bipolar transistor on a semiconductor wafer is provided. The method includes steps of implanting p-type dopants into diffusion compensation regions (23) where an intrinsic base region (18) intersects an isolation oxide (31). The implant step is carried out before depositing a poly layer (from which an emitter contact (27a) is formed). Thus, the diffusion compensation region (23) is also located below the emitter contact (27a). A diffused emitter (27b) is subsequent formed by diffusing dopant from the emitter contact (27a) into the underlying active area.

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