Process for the production of thin semiconductor material films

Details Process for the production of thin semiconductor material films Process for the production of thin semiconductor material films

1992-09-15

1994-12-20

Fourson, George

Fishing, trapping, and vermin destroying

437 26, 437966, 148DIG12, H01L 21265

Patent

active

053745647

ABSTRACT:
Process for the preparation of thin moncrystalline or polycrystalline semiconductor material films, characterized in that it comprises subjecting a semiconductor material wafer having a planar face to the three following stages: a first stage of implantation by bombardment (2) of the face (4) of the said wafer (1) by means of ions creating in the volume of said wafer a layer (3) of gaseous microbubbles defining in the volume of said wafer a lower region (6) constituting the mass of the substrate and an upper region (5) constituting the thin film, a second stage of intimately contacting the planar face (4) of said wafer with a stiffener (7) constituted by at least one rigid material layer, a third stage of heat treating the assembly of said wafer (1) and said stiffener (7) at a temperature above that at which the ion bombardment (2) was carried out and sufficient to create by a crystalline rearrangement effect in said wafer (1) and a pressure effect in the said microbubbles, a separation between the thin film (5 ) and the mass of the substrate (6).

REFERENCES:
patent: 4931405 (1990-06-01), Kamijo et al.
patent: 5034343 (1991-07-01), Rouse et al.
patent: 5198371 (1993-03-01), Li
IBM Technical Disclosure Bulletin, vol. 29, No. 3, Aug., 1986, p. 1416.
Applied Physics Letter, vol. 55, No. 21, Nov. 20, 1989, pp. 2223-2224.

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