Opto-semiconductor device and method of fabrication of the same

Details Opto-semiconductor device and method of fabrication of the same Opto-semiconductor device and method of fabrication of the same

1990-06-04

1991-11-26

Hellner, Mark

357 15, 357 16, 357 2, 357 4, 357 65, 357 67, H01L 3300

Patent

active

050678094

ABSTRACT:
In an opto-semiconductor device, a light-emitting part formed on a substrate, a transparent insulating monocrystalline layer is formed over the entire surface of the substrate covering the light-emitting part, a contact window is opened through the transparent insulating monocrystalline layer in the center of the light-emitting part, and an electrode is formed of a transparent conductive monocrystalline layer passing through the contact window and connected to the central part of the light-emitting part, the electrode being formed on the transparent insulating monocrystalline layer. A transparent insulating monocrystalline layer may additionally be formed on the device including the electrode formed of the transparent conductive monocrystalline layer, and a photo-sensitive device formed of a monocrystalline layer may be provided on the transparent insulating monocrystalline layer.

REFERENCES:
patent: 3790867 (1974-02-01), Hayakawa
patent: 3881113 (1975-04-01), Rideout
patent: 4217598 (1980-08-01), D'Auria et al.
patent: 4495514 (1985-01-01), Lawrence et al.
patent: 4670355 (1987-06-01), Matsudaira
patent: 4680602 (1987-07-01), Watanabe
patent: 4766471 (1988-08-01), Ovshinsky
European Search Report, 11/28/90, Appl. No. EP 90 30 6150.
OKI Kenkyu Kaihatsu (OKI Research and Development) vol. 52, No. 1, "Development of Monolithic LED Array", by Takano, Jan., 1985.

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