Method of manufacturing a semiconductor device

Fishing – trapping – and vermin destroying

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427304, 427305, H01L 31288

Patent

active

050175165

ABSTRACT:
By using a nucleating solution having a low concentration of PdCl.sub.2 at an increased temperature, contact holes can be nucleated in a selective manner and, subsequently, metallized in an electroless bath, said contact holes being etched by means of plasma etching in dielectric layers of VLSI devices having a silicon semiconductor body.

REFERENCES:
patent: 3415679 (1968-10-01), Chuss
patent: 3993799 (1976-11-01), Feldstein
patent: 4297393 (1981-10-01), Denning et al.
patent: 4321283 (1982-03-01), Patel et al.
patent: 4419390 (1983-12-01), Feldstein
patent: 4634468 (1987-01-01), Gulla et al.
patent: 4692349 (1987-09-01), Georgiou et al.
patent: 4804410 (1989-02-01), Haga et al.

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