Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Patent
1997-08-21
1999-12-28
Chaudhuri, Olik
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
438444, H01L 2176
Patent
active
060081066
ABSTRACT:
A method of forming isolation region of an integrated circuit by using rough oxide mask is described. First, a layer of first dielectric is formed on the surface of a silicon substrate. The first dielectric layer is then patterned to define active device region and isolation region. Next, a very thin layer of silicon dioxide is formed over the silicon substrate surface, followed by depositing a layer of rough oxide with proper grain size overlaying the silicon dioxide layer. By using rough oxide grains as an etching mask, the silicon dioxide layer and the silicon substrate underneath are spontaneously etched to form multiple trenches in the isolation region. Next, the rough oxide grains and silicon dioxide layers are stripped. Then, filed oxidation is performed to complete the field oxide isolation formation.
REFERENCES:
patent: 5292689 (1994-03-01), Cronin et al.
patent: 5308786 (1994-05-01), Lur et al.
patent: 5374583 (1994-12-01), Lur et al.
patent: 5747377 (1998-05-01), Wu
patent: 5756389 (1998-05-01), Lim et al.
patent: 5879988 (1999-03-01), Chen et al.
Chu Chih-Hsun
Kuang-Chao Chen
Ni Cheng-Tsung
Tu Tuby
Chaudhuri Olik
Duy Mai Anh
Mosel Vitelic Inc.
LandOfFree
Micro-trench oxidation by using rough oxide mask for field isola does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Micro-trench oxidation by using rough oxide mask for field isola, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Micro-trench oxidation by using rough oxide mask for field isola will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2381859