Process for minimizing lateral distance between elements in an i

Details Process for minimizing lateral distance between elements in an i Process for minimizing lateral distance between elements in an i

1989-10-02

1991-05-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 52, 437 53, 357 24, 430312, 1566591, 1566611, H01L 2100, H01L 2102, H01L 2190

Patent

active

050175157

ABSTRACT:
The process of this invention includes forming and patterning a first layer of photoresist to form first lines of photoresist having substantially minimum lithographic widths, forming first elements between the first lines of photoresist, removing the photoresist, forming a sidewall member on each side edge of the first elements, forming a second layer over the structure, and etching to electrically insulate the first elements and the second elements at the sidewalls. Alternatively, the structure is coated with another layer of photoresist after formation of sidewall member on each side of the first elements. The layer of photoresist is patterned to form second photoresist lines that cover alternating sidewall members. The exposed sidewall members are removed. Strips are formed between the second photoresist lines. After removal of the second photoresist lines, the structure is etched as before. However, in this embodiment, lateral extensions of the first elements are formed. The combined elements are separated by the remaining sidewall members.

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Ho, I., Fabrication of High-Density Charge-Coupled Devices with Self-Isolated Clock Lines, IBM Tech. Dis. Bull., vol. 15, No. 3, 8/1972, pp. 1052-1053.

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