Method of manufacturing a light emitting diode to vary band gap

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

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438 22, 438 29, 438 46, 438 47, 438478, H01L 2120

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active

060080663

ABSTRACT:
A light-emitting diode 10 showing stable temperature characteristics achieved by reliably preventing stimulated emission regardless of temperature changes, comprising:

REFERENCES:
patent: 4975752 (1990-12-01), Kashima et al.
patent: 4976752 (1990-12-01), Kashima et al.
Yasumasa Kashima, "Linear InGaAsP Edge-Emitting LED's for Single-Mode Fiber Communications", Journal of Lightwave Technology, vol., 10, No. 11, Nov. 1992, pp. 1650-1655.

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