Refractory metal capped low resistivity metal conductor lines an

Details Refractory metal capped low resistivity metal conductor lines an Refractory metal capped low resistivity metal conductor lines an

1992-08-12

1995-04-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437192, 437195, 437228, 148DIG15, H01L 2144, H01L 2148

Patent

active

054037794

ABSTRACT:
Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH.sub.4 to WF.sub.6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1 mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1 mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

REFERENCES:
patent: 4659427 (1987-04-01), Barry et al.
patent: 4724060 (1988-02-01), Sakata et al.
patent: 4801559 (1989-01-01), Imaoka
patent: 5171412 (1992-12-01), Talieh et al.
patent: 5187119 (1993-02-01), Cech et al.
S. M. Rossnagel, et al., "Collimated Magnetron Sputter Deposition" J. Vac. Sci. Technol. A9 (2) Mar./Apr. 1991 pp. 261-265.
D. Liu et al. "Properties of titanium and aluminium thin films deposited by collimated sputtering" Thin Solid Films 236 (Dec. 1993) pp. 267-273.
Tohru Hara, et al. "Properties of Titanium Layers Deposited by Collination Sputtering" Jpn. J. Appl. Phys. vol. 31 (Dec. 1992) pp. L1746-L1749.
Wolf, S., Silicon Processing for the VLSI Era, vol. II. Lattice Press 1990 pp. 252-253, 247, and 192-193.

Affiliated with

Also associated with

Rating

Refractory metal capped low resistivity metal conductor lines an does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Refractory metal capped low resistivity metal conductor lines an, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Refractory metal capped low resistivity metal conductor lines an will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2380483