Fishing – trapping – and vermin destroying
Patent
1994-04-22
1995-04-04
Fourson, George
Fishing, trapping, and vermin destroying
437 72, H01L 2176
Patent
active
054037700
ABSTRACT:
A method for forming a field oxide film in a semiconductor device, wherein the field oxide film is integral with a nitride film disposed on an active region, thereby preventing spacers formed from being easily spread on the upper surface of the nitride film disposed on the active region even though they are subjected to a force from the field oxide film in oxidation of a silicon substrate. This structure also inhibits lateral diffusion of oxygen and thereby reduces the length of bird's beak formed. The method also enables accurate formation of a required dimension of spacers so that the dimension of bird's beak formed can be minimized. Also the method of the present invention solves the problem of a nitride film loss upon forming the spacers and enables an accurate adjustment of a trench depth. Accordingly, it is possible to form a field oxide film exhibiting a good element isolation characteristic required in a highly integrated semiconductor device.
Fourson George
Hyundai Electronics Industries Co,. Ltd.
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