Process of forming a bipolar type semiconductor device

Details Process of forming a bipolar type semiconductor device Process of forming a bipolar type semiconductor device

1993-12-10

1995-04-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 59, 437 67, 437162, 148DIG9, H01L 21265

Patent

active

054037581

ABSTRACT:
A semiconductor device in which a bipolar transistor is provided, such as a BiCMOS, and a production process thereof. The device has collector region of a first conductivity type; an intrinsic base region of a second conductivity type provided on the collector region; a graft base provided on the periphery of this intrinsic base region; and an emitter region of the first conductivity type provided by self-alignment with respect to the intrinsic base. A base electrode is provided in the upper portion where the graft base is scheduled to be formed. A trench is provided by self-alignment along the end portion on the outer circumference side of this base electrode. The graft base is provided in contact with the inner circumference of this trench.

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