Process for making a bipolar transistor including selective oxid

Details Process for making a bipolar transistor including selective oxid Process for making a bipolar transistor including selective oxid

1989-03-06

1991-05-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 33, 437918, 437968, 437162, 437956, 148DIG19, H01L 21331

Patent

active

050175033

ABSTRACT:
An integrated circuit device of large scale integration and a method of manufacturing the same makes possible high density packing of circuit elements by eliminating a great number of very minute contact holes. Instead, a circuit-element connector comprised of a polycrystalline silicon wiring path is formed by selective oxidation. Impurity atoms are introduced into the semiconductor substrate through the polycrystalline silicon circuit-element connector to form a desired circuit element. A layer of high-conductive material is provided on the polycrystalline silicon layer.

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