Semiconductor laser

Details Semiconductor laser Semiconductor laser

1981-06-04

1984-02-14

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, H01S 319

Patent

active

044320922

ABSTRACT:
A very narrow current injection region (16") is made by means of terrace-shaping of the surface of the current limiting layer (13) forming a step thereon, the current limiting layer being on the epitaxially grown double hetero structure layers (10, 11 and 12) including the active layer (11). By so terrace-shaping, when Zn as a p-type impurity to form the current injection region (16) is diffused from the surface of the current limiting layer (13), the diffused region is formed to have a deeper part (16") and a shallower part (16'), and the deeper part (16") can be made very narrow by selecting the position of the stripe-shaped diffused region with respect to the step (14).

REFERENCES:
patent: 3916339 (1975-10-01), Ladany et al.
patent: 4122410 (1978-10-01), Kressel et al.

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