Semiconductor laser including an aluminum-rich AlGaAs etch stopp

Details Semiconductor laser including an aluminum-rich AlGaAs etch stopp Semiconductor laser including an aluminum-rich AlGaAs etch stopp

1993-01-06

1994-10-18

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

053575350

ABSTRACT:
In accordance with the invention, after a crystal growth is carried out successively to produce at least a first conductivity type lower cladding layer, and active layer, a second conductivity type first upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, an etching stopper layer of AlGaAs having an AlAs composition ratio of more than 0.6, and a second conductivity type second upper cladding layer of AlGaAs having an AlAs composition ratio of 0.38 to 0.6, the second upper cladding layer is selectively etched using an etchant including an organic acid and hydrogen peroxide, thereby forming a ridge. As a result, a ridge-type semiconductor laser device which has a desirable laser structure and an oscillation wavelength below 830 nm can be produced easily with improved controllability and reproducibility.

REFERENCES:
patent: 5175740 (1992-12-01), Elman et al.
patent: 5297158 (1994-03-01), Naitou et al.
Nakatsuka et al., "A New Self-Aligned Structure for (GaAl) As High Power Lasers with Selectively Grown Light Absorbing GaAs Layers Fabricated by MOCVD", Japanese Journal of Applied Physics vol. 25, No. 6 Jun., 1986, pp. L498-L500.
Elman et al., "High Power 980nm Ridge Waveguide Lasers With Etch-Stop Layer", Electronics Letters, Oct. 24, 1991, pp. 2032 and 2033.

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