Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1980-08-29

1984-02-14

Larkins, William D.

357 59, H01L 2704, G11C 1140

Patent

active

044320060

ABSTRACT:
In a semiconductor memory device of the present, due to a heavily doped region formed on the semiconductor substrate, the depletion layer does not spread deeply toward the interior of the semiconductor substrate. In addition, a capacitor is formed by the heavily doped region, an insulating film formed on this region and a semiconductor layer formed on this insulating film. As a result, variation of capacitance of the capacitor due to .alpha.-ray particles is low. Furthermore, information is stored in the semiconductor layer which is formed above the semiconductor substrate so that the occurrence of a soft error is minimized.

REFERENCES:
patent: 3387286 (1968-06-01), Dennard
patent: 3600651 (1971-08-01), Duncan
patent: 4041518 (1977-08-01), Shimizu et al.
patent: 4156939 (1979-05-01), Takemae et al.
patent: 4251828 (1981-02-01), Sakurai
patent: 4353085 (1982-10-01), Sakurai
May et al., IEEE Trans. ED, vol. ED 26, no. 1, Jan. 1979, pp. 2-8.
Barson et al., IBM Tech. Discl. Bulletin, vol. 16, No. 6, Nov. 1973, p. 1698.

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