Semiconductor device having a ternary boron nitride film and a m

Details Semiconductor device having a ternary boron nitride film and a m Semiconductor device having a ternary boron nitride film and a m

1993-02-01

1994-06-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG113, 4272552, 437235, H01L 21304

Patent

active

053246900

ABSTRACT:
A non-silyated, ternary boron nitride film (18, 38) is provided for semiconductor device applications. The non-silyated, ternary boron nitride film is preferably formed by plasma-enhanced chemical vapor deposition using non-silyated compounds of boron, nitrogen, and either oxygen, germanium, germanium oxide, fluorine, or carbon. In one embodiment, boron oxynitride (BNO) is deposited in a plasma-enhanced chemical vapor deposition reactor using ammonia (NH.sub.3), diborane (B.sub.2 H.sub.6), and nitrous oxide (N.sub.2 O). The BNO film has a dielectric constant of about 3.3 and exhibits a negligible removal rate in a commercial polishing apparatus. Because of its low dielectric constant and high hardness, the ternary boron nitride film formed in accordance with the invention can be advantageously used as a polish-stop layer and as a interlevel dielectric layer in a semiconductor device.

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