Method of fabricating a semiconductor acceleration sensor

Details Method of fabricating a semiconductor acceleration sensor Method of fabricating a semiconductor acceleration sensor

1991-12-16

1994-06-28

Fourson, George

Fishing, trapping, and vermin destroying

437901, 437921, H01L 21308

Patent

active

053246888

ABSTRACT:
A P-type impurity is diffused into an N-type epitaxial layer formed on a P-type silicon substrate. A gauge resistor for measuring deformation is formed on this epitaxial layer, with an aluminum wiring provided between the gauge resistor and a pad. Then, bottom-surface etching is performed on the resultant structure to remove a groove portion, thus forming a cantilever, weight portion and rim portion. The groove portion between the weight portion and rim portion is formed to penetrate through the P-type diffusion layer and become narrower toward the top surface from the bottom surface, thus preventing dust or the like from entering the groove portion. The etching from the bottom can reduce the number of required etching steps, ensuring lower fabrication cost.

Affiliated with

Also associated with

Rating

Method of fabricating a semiconductor acceleration sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a semiconductor acceleration sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a semiconductor acceleration sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2377391