Method of making an integrated circuit capable of low-noise and

Details Method of making an integrated circuit capable of low-noise and Method of making an integrated circuit capable of low-noise and

1993-04-29

1994-06-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437133, 437184, 437912, H01L 2172

Patent

active

053246829

ABSTRACT:
In one form of the invention, an integrated circuit for providing low-noise and high-power microwave operation is disclosed comprising: a) a material structure formed during a single epitaxial growth cycle, said structure comprising: i) a substrate 10; ii) a donor layer 16 above the substrate; iii) a first wide bandgap buffer layer 18 above the donor layer; iv) an undoped first channel layer 19 above the first wide bandgap layer; v) a second channel layer 24 above the first channel layer; and vi) a second wide bandgap layer 26 above the second channel layer; b) a first device 80 fabricated of the material structure comprising: i) a first source contact 50 to said first channel layer; ii) a first drain contact 54 to said first channel layer; and iii) a first gate contact 38 above the first channel layer; and c) a second device 82 fabricated of the material structure comprising: i) a second source contact 52 to said second channel layer; ii) a second drain contact 56 to said second channel layer; and iii) a second gate 46 contacting the second wide band-gap layer.

REFERENCES:
patent: 4746627 (1988-05-01), Zuleeg
patent: 5077231 (1991-12-01), Plumton et al.
patent: 5100831 (1992-03-01), Kuwata
patent: 5151758 (1992-09-01), Smith
patent: 5166083 (1992-11-01), Bayraktaroglu
patent: 5234848 (1993-08-01), Seabaugh
patent: 5254492 (1993-10-01), Tserng
Saunier et al., U.S. appl. #07/648,091 "GaAs FET with resistive AlGaAs", filed Jan. 31, 1991, abandoned Mar. 21, 1992.

Affiliated with

Also associated with

Rating

Method of making an integrated circuit capable of low-noise and does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making an integrated circuit capable of low-noise and , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making an integrated circuit capable of low-noise and will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2377312