Method of manufacturing a thyristor device with improved turn-of

Details Method of manufacturing a thyristor device with improved turn-of Method of manufacturing a thyristor device with improved turn-of

1992-07-30

1994-06-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 27, 437 28, 437 50, H01L 4900

Patent

active

053246705

ABSTRACT:
A thyristor structure comprises a p.sup.+ -type substrate (21), an n-type base layer (22), a first p-type diffusion region (23) and an n.sup.+ -type diffusion region (25). A MOS structure comprises the base layer (22), first and second p-type diffusion regions (23, 24) and the n.sup.+ -type diffusion region (25). A positive voltage is applied to a gate electrode (27) to form a channel in a portion of the first diffusion region (23) just under the gate electrode (27), so that a cathode electrode (28) supplies carriers to the base layer (22) through the n.sup.+ -type diffusion region (25) and the channel, to turn on the thyristor. A negative voltage is applied to the gate electrode (27) to form a channel in a portion of the base layer (22) just under the gate electrode (27), so that the first p-type diffusion region (23) and the n.sup.+ -type diffusion region (25) are shorted through the channel, the second p-type diffusion region (24) and the cathode electrode (28), to turn off the thyristor.

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