Ionizing radiation dose monitor using silicon-on-sapphire transi

Details Ionizing radiation dose monitor using silicon-on-sapphire transi Ionizing radiation dose monitor using silicon-on-sapphire transi

1982-04-14

1984-02-14

Willis, Davis L.

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

G01T 122

Patent

active

044319207

ABSTRACT:
A reusable solid state device is disclosed which monitors ionizing radiat. The device is a silicon-on-sapphire n-channel MOS transistor having a back-channel leakage current which is proportional to total radiation dose. To return the monitor to its original reusable state, the drain-to-source transistor bias is reduced to zero while irradiating the device to an appropriate dose level.

REFERENCES:
patent: 4100672 (1978-07-01), King et al.
patent: 4197461 (1980-04-01), Umbarger et al.
patent: 4253023 (1981-02-01), Whited
patent: 4255659 (1981-03-01), Kaufman et al.

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