Photo-electric transducer

Details Photo-electric transducer Photo-electric transducer

1981-10-15

1985-07-30

James, Andrew J.

357 2, 357 15, 357 237, 357 32, 357 41, 357 59, H01L 2714, H01L 4500, H01L 2978, H01L 2702

Patent

active

045325367

ABSTRACT:
A photo-electric transducer comprises a photo-electric transducing element which includes a semiconductor layer formed of a photosensitive semiconductor material; first and second gate electrodes juxtaposed on the semiconductor layer through an insulating layer; a drain electrode disposed outside of the first gate electrode; a source electrode disposed outside of the second gate electrode; and an output electrode disposed between the drain electrode and source electrode on the semiconductor layer to take up output signals, wherein one of the area A of the semiconductor layer opposed to said first gate electrode and the area B of the semiconductor layer opposed to the second gate electrode is formed as light incidence part and the other area is formed as non-light incidence part.

REFERENCES:
patent: 3385731 (1968-05-01), Weimer
patent: 3493812 (1970-02-01), Weimer
patent: 3969751 (1976-07-01), Drukaoff et al.
patent: 4323912 (1982-04-01), Koike et al.
patent: 4342044 (1982-07-01), Ovshinsky et al.
patent: 4412236 (1983-10-01), Sasano et al.
P. G. Le Comber et al., "Amorphous-Silicon Field-Effect Device and Possible Application," Electronics Letters, vol. 15, (1979), pp. 179-181.
W. A. Anderson et al., "Surface State and Performance Evaluation of Schottky Barrier Solar Cells on Amorphous Silicon", Conference: Thirteenth IEEE Photovoltaic Specialists Conference, Washington, D. C., (1978), pp. 755-760.

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