Submicron conductor manufacturing

Details Submicron conductor manufacturing Submicron conductor manufacturing

1984-08-27

1985-07-30

James, Andrew J.

357 22, H01L 2948, H01L 2980

Patent

active

045325324

ABSTRACT:
A submicron conductor is formed by placing a metal member over an insulator both terminating at a common defined edge. An angularly deposited metal against the edge provides a broad metal conductor attached along the entire edge of a thin metal member which is positioned on the substrate on a narrow line with the width defined by the horizontal component of the angular deposition. A removal operation removes with respect to the vertical component of the angular deposition the excess angularly deposited metal and leaves a vertical, very narrow metal conductor having a horizontal metal over the dielectric in electrical and supporting contact along the entire length. The asymmetry of the conductor provides field effect transistor advantages.

REFERENCES:
patent: 4262296 (1981-04-01), Shealy et al.
patent: 4280854 (1981-07-01), Shibata et al.

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