Mosfet logical circuit with increased noise margin

Details Mosfet logical circuit with increased noise margin Mosfet logical circuit with increased noise margin

1983-09-02

1985-07-30

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307451, 307279, 331108D, 331114, 365156, 365181, 365182, 365188, H03K 19094, H03K 3353, G11C 1140, H03B 536

Patent

active

045324395

ABSTRACT:
A logic circuit comprises a first and second circuit. The first circuit consists of at least one first conductivity-type MOSFET having a gate connected to an input terminal, and having a first current path connected at one end to an output terminal. The second circuit consists of at least one second conductivity-type MOSFET having a gate is connected to the input terminal, and having a second current path connected at one end to the output terminal. The logical circuit further comprises a depletion-type MOSFET of the second conductivity type and a depletion-type MOSFET of the first conductivity type. The depletion-type MOSFET of the second conductivity type has a threshold voltage the absolute value of which is larger than that of the first conductivity-type MOSFET, has a current path connected between the other end of the first current path and a first power source, and has a gate connected to the output terminal. The depletion-type MOSFET of the first conductivity type has a threshold voltage the absolute value of which is larger than that of the second circuit, has a current path connected between the other end of the second conductivity-type MOSFET and a second power source, and has a gate connected to the output terminal.

REFERENCES:
patent: 3855549 (1974-12-01), Heuner et al.
patent: 3873856 (1975-03-01), Gerlach et al.
patent: 3984703 (1976-10-01), Jorgensen
patent: 4023122 (1977-05-01), Oura
patent: 4103187 (1978-07-01), Imamura
patent: 4122360 (1978-10-01), Kawagai et al.
patent: 4130892 (1978-12-01), Gunckel et al.
patent: 4464587 (1984-08-01), Suzuki et al.

Affiliated with

Also associated with

Rating

Mosfet logical circuit with increased noise margin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mosfet logical circuit with increased noise margin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mosfet logical circuit with increased noise margin will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2375161