Power MOSFET circuit including short circuiting means for detect

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

307571, 307574, 307254, 307270, 257262, 257263, H03K 17687, H03K 1760, H03K 301

Patent

active

053571576

ABSTRACT:
In a high side switching circuit for switching, an inductive load with a power MOSFET on and off, whose drain is connected with a power source and whose source is connected with the inductive load, a short-circuiting means for preventing undesired turn-on of the power MOSFET by establishing a short circuit between the gate and source of the power MOSFET when the source potential of the power MOSFET becomes lower than the ground potential. Preferably, the short-circuiting means comprises a field-effect or bipolar transistor whose control electrode is grounded.

REFERENCES:
patent: 4992836 (1991-02-01), Sicard
patent: 5010439 (1991-04-01), Zisa et al.
patent: 5028811 (1991-07-01), le Roux et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Power MOSFET circuit including short circuiting means for detect does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power MOSFET circuit including short circuiting means for detect, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power MOSFET circuit including short circuiting means for detect will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2374919

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.