Semiconductor IIL device with dielectric and diffusion isolation

Details Semiconductor IIL device with dielectric and diffusion isolation Semiconductor IIL device with dielectric and diffusion isolation

1994-06-22

1996-01-02

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257560, 257574, 257575, H01L 29732, H01L 29735

Patent

active

054811309

ABSTRACT:
n type epitaxial layers are formed on the main surface of a p type semiconductor substrate. A field oxide film is selectively formed in the surface of n type epitaxial layers. An n type diffusion region is formed in n type epitaxial layers positioned directly under field oxide film. A base region and a collector region are respectively formed in the surface of n type epitaxial layer positioned between field oxide films. As a result, a semiconductor device having an IIL circuit is obtained which can suppress the parasitic bipolar operation between base regions, reduce the junction capacitance between the base region and the emitter region and which can be reduced in size.

REFERENCES:
patent: 4512075 (1985-04-01), Vora
patent: 5331198 (1994-07-01), Kanda et al.
Journal of Institute of Electronics, Information and communication Engineers of Japan, Feb. 1978, pp. 192-193.

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