Investigation of near-surface electronic properties in semicondu

Details Investigation of near-surface electronic properties in semicondu Investigation of near-surface electronic properties in semicondu

1977-12-22

1979-03-13

Krawczewicz, Stanley T.

Electricity: measuring and testing

Conductor identification or location

Inaccessible

250307, 324158R, G01R 2702

Patent

active

041444884

ABSTRACT:
An electron-beam scanning system for investigating the nonuniformity of (1) he work function, (2) the position of the conduction-band edge with respect to the Fermi level, and (3) the electron affinity at the surface of a single-crystal semiconductor. A small-diameter, low-energy electron beam is scanned over the surface to be investigated. The current collected by the surface for electron energies in the retarding-field region is related to the work function of the surface, whereas the current collected by the surface for electron energies in the accelerating-field region is related to the position of the conduction-band edge. The electron affinity is related to the combination of these relationships. Variations in the current collected by the surface for appropriately selected electron energies are used to provide a visual display of variations in these quantities.

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patent: 3876879 (1975-04-01), McAdams et al.
patent: 3935458 (1976-01-01), Peters
patent: 4000458 (1976-12-01), Miller et al.

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