Field effect semiconductor device having improved voltage breakd

Details Field effect semiconductor device having improved voltage breakd Field effect semiconductor device having improved voltage breakd

1986-04-17

1987-02-10

Edlow, Martin H.

357 234, 357 41, 357 53, 357 13, H01L 2978, H01L 2990, H01L 2702, H01L 2940

Patent

active

046426744

ABSTRACT:
A semiconductor device including a field effect transistor of the D-MOS type which is composed of substructures and in which further surface zones are provided in the intermediate spaced between the regularly arranged substructures in order to improve the field distribution in the semiconductor body, as a result of which the breakdown voltage of the transistor is increased. The further surface zones can be provided without additional processing steps being required and need not be contacted at the main surface.

REFERENCES:
patent: 4300150 (1981-11-01), Colak
patent: 4422089 (1983-12-01), Vaes et al.
patent: 4485392 (1984-11-01), Singer
patent: 4543596 (1985-09-01), Strack et al.
patent: 4561003 (1985-12-01), Tihanyi et al.
Leipold et al. "SIPMOS FET . . . " Proceed. of the Journees d'Electronique et de Microtechnique: 1980 on the subject Limits To Miniaturization, Lausanne, Switzerland Oct. 7-9, 1980 pp. C51-C58.

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