Patent
1984-12-07
1987-02-10
Clawson, Jr., Joseph E.
357 20, 357 38, 357 55, 357 56, 357 89, 357 90, H01L 2934
Patent
active
046426698
ABSTRACT:
For improving the dynamic characteristics of semiconductor components required to absorb high reverse voltages only in one polarity (diodes, reverse-conducting thyristors and asymmetric thyristors), in many cases structures having an n base consisting of two layers are used. In order to improve the reverse-voltage capability, it is proposed, in a semiconductor component having at least one pn.sup.- n sequence of layers, to select the thickness (S) and the doping of an n stop layer (4) in such a way that the following applies: ##EQU1## where e=elementary charge, .epsilon.=dielectric constant of the semiconductor, N.sub.D =donor concentration, X=path coordinate, 0.8.ltoreq.k.ltoreq.1.0 and E.sub.n =field strength at the n.sup.- n junction. The effect of this measure is that the geometric conditions of the edge chamfering are less stringent. The edge can also be shaped by means of conventional etching processes.
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Roggwiller Peter
Sittig Roland
BBC Brown Boveri & Company Limited
Clawson Jr. Joseph E.
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