Semiconductor device having improved thermal characteristics

Details Semiconductor device having improved thermal characteristics Semiconductor device having improved thermal characteristics

1985-12-05

1987-02-10

Larkins, William D.

357 28, 357 34, 357 40, 357 45, H01L 2970, H01L 2972

Patent

active

046426680

ABSTRACT:
The thermal behavior of a semiconductor body is considerably improved by giving parts of high and equal dissipation the same surface area and situating these regions so that the edge of the semiconductor body constitutes a mirror surface for a row of such regions. These regions may comprise subtransistors of power transistors or a Darlington circuit. In the latter case, a further improvement is possible by thermal cross-coupling. The additional space at the edge which is required to apply the reflection principle can be used for nondissipating elements.

REFERENCES:
patent: 3567506 (1971-03-01), Belardi
patent: 3704398 (1972-11-01), Fukino
patent: 3868720 (1975-02-01), New et al.
patent: 3896486 (1975-07-01), Wright
patent: 3952258 (1976-04-01), Smulders
patent: 4136354 (1979-01-01), Dobkin
patent: 4161740 (1979-07-01), Frey
G. Bosch, "Anomalous Current Distributions in Power Transistors", Solid-State Electronics, 1977, vol. 20, 635-640.

Affiliated with

Also associated with

Rating

Semiconductor device having improved thermal characteristics does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having improved thermal characteristics, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having improved thermal characteristics will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2365778