Lateral double-diffused MOS transistor device

Details Lateral double-diffused MOS transistor device Lateral double-diffused MOS transistor device

1980-06-16

1981-11-10

Wojciechowicz, Edward J.

357 52, 357 13, H01L 2972

Patent

active

043001505

ABSTRACT:
A lateral double-diffused MOS transistor includes a field-shaping semiconductor layer which serves to improve the breakdown voltage and/or on-resistance characteristics of the device. The field-shaping layer redistributes the electrical field in the device during operation in order to eliminate electrical field crowding in portions of the device where breakdown would otherwise first occur. The field shaping layer may be a buried layer, a surface layer, or a composite layer having both buried and surface layer portions.

REFERENCES:
patent: 4190850 (1980-02-01), Tihanyi et al.

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