Semiconductor laser of a refractive index-guided type and a proc

Details Semiconductor laser of a refractive index-guided type and a proc Semiconductor laser of a refractive index-guided type and a proc

1988-07-28

1989-07-25

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 46, H01S 319

Patent

active

048521108

ABSTRACT:
A semiconductor laser of a refractive index-guided type comprises a GaAs (100) substrate having a mesa of (011) orientation thereon, a buffer layer grown on the top surface and side walls of the mesa of the GaAs (100) substrate and having a mesa on the top surface, a first cladding layer grown on the buffer layer in compliance with the outline on the top surface of the buffer layer having the mesa so that a mesa is provided, an active layer grown on the first cladding layer and separated on the side walls of the mesa of the first cladding layer, and a second cladding layer grown on the active layer, a boundary surface of which is in contact through a separated portion of the active layer with a boundary surface of the first cladding layer, wherein the first and second cladding layer are of a semiconductor material selected from AlGaInP and AlInP, and of a forbidden energy bandgap larger than that of the active layer. The semiconductor laser as described above is fabricated by a single etching process and a single and common metalorganic vapor phase epitaxy.

REFERENCES:
patent: 4523318 (1985-06-01), Connolly et al.
patent: 4674094 (1987-06-01), Murakami
patent: 4680768 (1987-07-01), Yagi
patent: 4737961 (1988-04-01), Mori et al.
patent: 4757509 (1988-07-01), Isshiki et al.
patent: 4779281 (1988-10-01), Naka et al.

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