Semiconductor device having a circuit for generating a voltage h

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307530, 307584, 307303, 365214, 357 23, H03K 1706, H03K 1714, H03K 1716, H01L 2702

Patent

active

044828250

ABSTRACT:
In a semiconductor device having a signal line on which a voltage higher than the voltage supply is generated, a conductive layer following the potential variance of the voltage supply is positioned under an insulating film directly below the signal line in order to make the level of the signal line follow the potential variance of the voltage supply.

REFERENCES:
patent: 3646369 (1972-02-01), Fujimoto
patent: 4115795 (1978-09-01), Masuoka et al.
patent: 4121240 (1978-10-01), Katto
patent: 4131906 (1978-12-01), Kinoshita
patent: 4197554 (1980-04-01), Meusburger et al.
patent: 4250414 (1981-02-01), Kirsch
patent: 4369379 (1983-01-01), Hull
patent: 4398106 (1983-08-01), Davidson et al.
IEEE Journal of Solid-State Circuits, vol. SC-16, No. 5, Oct., 1981, New York, pp. 495-498.

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