Solid-state image sensor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

H01L 2978

Patent

active

048518905

ABSTRACT:
A solid-state image sensor having a plurality of unit cells, each of which comprises a photosensitive area and a CCD register for the transfer of a signal charge generated in the photosensitive area. Both the photosensitive area and the CCD register are disposed on a first layer, having different polarities than the charging polarity of the signal charge, which is disposed on a substrate having the same polarity as the signal charge. The CCD register is underlaid by a second layer having the same polarity as the first layer and the second layer contains a higher impurity concentration than the first layer.

REFERENCES:
patent: 4498013 (1985-02-01), Kuroda et al.
"An Interline CCD Image Sensor with Reduced Image Lag", 8093 IEEE Transactions on Electron Devices, ED-31 (1984) Dec., No. 12, New York, USA.
"A 580.times.500 Element CCD Imager with a Shallow Flat P Well", 8172 IEEE International Solid-State Circuits Conference, 28 (1985) Feb., 32nd Conf., Coral Gables, Fla., USA.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Solid-state image sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Solid-state image sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid-state image sensor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2362047

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.