Method of producing Josephson elements of the tunneling junction

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

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29599, 357 5, 427 39, C23C 1500, H01L 3922

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042996791

ABSTRACT:
In a method of producing a Josephson element of the tunneling junction type comprising the steps of forming the first electrode by utilizing a photoresist film, forming a barrier oxide film on the first electrode by an rf oxygen glow discharge process and forming the second electrode, the improvement wherein immediately after depositing a film of super-conductor material to form the first electrode film, the superconducting material film is oxidized in the same apparatus in which the superconducting material was deposited.

REFERENCES:
L. O. Mullen et al., "Fabrication of Tunnel Junctions on Niobium Films", J. Appl. Phys., vol. 40, pp. 2115-2117 (1969).
G. Folens et al., "Production of Superconducting Proximity Junctions by RF-Sputtering & Photolithographic Techniques", LeVide, vol. 31, pp. 142-147 (1976).

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