Semiconductor laser

Details Semiconductor laser Semiconductor laser

1984-07-24

1987-01-13

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 16, 357 17, 372 48, H01S 319

Patent

active

046370293

ABSTRACT:
A GaAlAs semiconductor laser element includes a Ga.sub.1-x Al.sub.x As active layer sandwiched by a first and second Ga.sub.1-y Al.sub.y As cladding layers. A Ga.sub.1-z Al.sub.z As substrate layer supports the first cladding layer, and a Ga.sub.1-z Al.sub.z As cap layer covers the second cladding layer. The AlAs mole fraction (z) of the substrate layer and the cap layer is selected slightly smaller than the AlAs mole fraction (x) of the active layer. Further, the active layer is located in the laser element so that the active layer is separated from the mounted surface by more than 35% of the laser element thickness, and is separated from the opposing surface by more than 18% of the laser element thickness.

REFERENCES:
patent: 4592060 (1986-05-01), Hayakawa et al.
patent: 4592062 (1986-05-01), Yamamoto et al.
S. Yamamoto et al, "680 nm CW Operation at Room Temperature by AlGaAs Double Heterojunction Lasers", IEEE Journal of Quantum Electronics, vol. QE-19, No. 6, Jun. 1983, pp. 1009-1015.

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